The Science and Engineering of Microelectronic Fabrication

• Provides an introduction to microelectronic processing to a wide audience
• Makes use of the process simulation package SUPREM, showing students how to use it to predict impurity profiles of practical interest

Contents

• Preface
• Section I Overview and Materials
• 1 Overview of Semiconductor Fabrication
• 1.1 Introduction
• 1.2 Layered Technologies: A Simple Example
• 1.3 Unit Processes
• 1.4 Technologies Overview
• 1.5 A Roadmap for the Course
• 2 Semiconductor Substrates
• 2.1 Phase Diagrams and Solid Solubility
• 2.2 Crystallography and Crystal Structure
• 2.3 Crystal Defects
• 2.4 Czochralski Growth
• 2.5 Bridgman Growth of GaAs
• 2.6 Float-Zone Growth
• 2.7 Wafer Preparation and Specifications
• 2.8 Summary and Future Trends
• Section II Unit Process I: Hot Processing and Ion Implantation
• 3 Diffusion
• 3.1 Fick's Diffusion Equation in One Dimension
• 3.2 Atomistic Models of Diffusion
• 3.3 Analytic Solutions of Fick's Law
• 3.4 Corrections to the iSimple asdf;
• 3.5 Diffusion Codefficients for Common Dopants
• 3.6 Analysis of Diffused Profiles
• 3.7 Diffusion in SiO2
• 3.8 Diffusion Systems
• 3.9 SUPREM Simulations of Diffusion Profiles
• 3.10 Summary
• 4 Thermal Oxidation
• 4.1 The Deal-Grove Model of Oxidation
• 4.2 The Linear and Parabolic Rate Coefficients
• 4.3 The Initial Oxidiation Regime
• 4.4 The Structure of SiO2
• 4.5 Oxide Characterization
• 4.6 The Effects of Dopants on Oxidation and Polysilicon Oxidatation
• 4.7 Oxidation Induced Stacking Faults
• 4.8 Alternative Thermal Dielectrics
• 4.9 Oxidation Systems
• 4.10 SUPREM III Oxidations
• 4.11 Summary
• 5 Ion Implantation
• 5.1 Idealized Ion Implant Systems
• 5.2 Coulomb Scattering
• 5.3 Vertical Projection Range
• 5.4 Channeling and lteral Projected Range
• 5.5 Implantation Damage
• 5.6 Shallow Junction Formation
• 5.7 Buried Dielectrics
• 5.8 Ion Implant Systems - Problems and Concerns
• 5.9 Implanted Profiles Using SUPREM III
• 5.10 Summary
• 6 Rapid Thermal Processing
• 6.1 Gray Body Radiation, Heat Exchange and Optical Absorption
• 6.2 High Intensity Optical Sources and the Reflecting Cavity
• 6.3 Temperature Measurement
• 6.4 Thermoplastic Stress
• 6.5 Rapid Thermal Activation of Impurities
• 6.6 Rapid Thermal Processing of Dielectrics
• 6.7 Silicidation and Contact Formation
• 6.8 Advanced Systems
• 6.9 Summary
• Section III Unit Processes 2: Pattern Transfer
• 7 Optical Exposure Tools
• 7.1 Lithography Overview
• 7.2 Diffraction
• 7.3 The Modulation Transfer Function and Optical Exposures
• 7.4 Source Systems and Spatial Coherence
• 7.5 Contact/Proximity Printers
• 7.6 Projection Printers
• 7.7 Advanced Mask Concepts
• 7.8 Surface Reflections and Standing Waves
• 7.9 Alignment
• 7.10 Summary
• 8 Photoresists
• 8.1 Photoresist Types
• 8.2 Organic Materials and Polymers
• 8.3 Typical Reactions of DQN Positive Photoresists
• 8.4 Contrast Curves
• 8.5 The Critical Modultaion Transfer Function
• 8.6 Applying and Developing Photoresist
• 8.7 Second Order Exposure Effects
• 8.8 Advanced Photoresists and Photoresist Processes
• 8.9 Summary
• 9 Nonoptical Lithographic Techniques
• 9.1 Interaction of a High Energy Beam With Matter
• 9.2 Electron Beam Lithography Systems
• 9.3 Electron Beam Lithography Summary and Outlook
• 9.4 X-Ray Sources
• 9.5 X-Ray Exposure Systems
• 9.6 X-Ray Masks
• 9.7 Summary and Outlook for X-Ray Lithography
• 9.8 E-Beam and X-Ray Resists
• 9.9 Radiation Damage in MOS Devices
• 9.10 Summary
• 10 Vacuum Science and Plasmas
• 10.1 The Kinetic Theory of Gases
• 10.2 Gas Flow and Conductance
• 10.3 Pressure Ranges and Vacuum Pumps
• 10.4 Vacuum Seals and Pressure Measurement
• 10.5 The DC Glow Discharge
• 10.6 RF Discharge
• 10.7 Magnetically Enhanced and ECR Plasmas
• 10.8 Radiation from Accelerated Charged Particles
• 10.9 Summary
• 11 Etching
• 11.1 Wet Etching
• 11.2 Basic Regimes of Plasma Etching
• 11.3 High Pressure Plasma Etching
• 11.4 Ion Milling
• 11.5 Reactive Ion Etching
• 11.6 Damage in Reactive Ion Etching
• 11.7 Magnetically Enhaned Reactive Ion Etch (MERIE) Systems
• 11.8 Lift Off
• 11.9 Summary
• Section IV Unit Processing 3: Thin Film Deposition and Epitaxial Growth
• 12 Physical Deposition: Evaporation and Sputtering
• 12.1 Phase Diagrams: Sublimation and Evaporation
• 12.2 Deposition Rates
• 12.3 Step Coverage
• 12.4 Evaporator Systems: Crucible Heating Techniques
• 12.5 Multicomponent Films
• 12.6 An Introduction to Sputtering
• 12.7 Physics of Sputtering
• 12.8 Deposition Rate: Ion Yield
• 12.9 Magnetron Sputtering
• 12.10 Morphology and Step Coverage
• 12.11 Sputtering Methods
• 12.12 Sputtering of Specific Materials
• 12.13 Stress in Deposited Layers
• 12.14 Summary
• 13 Chemical Vapor Deposition
• 13.1 Types of Chemical Reactions
• 13.2 Chemical Equilibrium and the Law of Mass Action
• 13.3 Gas Flow and Boundary Layers
• 13.4 CVD Process Requirements
• 13.5 Low Pressure CVD Processes
• 13.6 Plasma Enhanced CVD
• 13.7 Photon Assisted and Laser Induced CVD
• 13.8 Characterization of CVD Dielectrics
• 13.9 Metal CVD
• 13.10 Summary
• 14 Exitaxial Growth
• 14.1 Wafer Cleaning and Native Oxide Removal
• 14.2 The Thermodynamics of Growth
• 14.3 Surface Reactions
• 14.4 Dopant Incorporation
• 14.5 Defects in Epitaxial Growth
• 14.6 Selective Growth
• 14.7 Halide Transport GaAs Vapor Phase Epitaxy
• 14.8 Incommensurate and Strained Layer Heteroepitaxy
• 14.9 Metal Organic Chemical Vapor Deposition (MOCVD)
• 14.10 Advanced Silicon Vapor Phase Epitaxial Growth Techniques
• 14.11 Molecular Beam Epitaxy Technology
• 14.12 BCF Theory
• 14.13 Gas Source MBE and Chemical Beam Epitaxy
• 14.14 Summary
• Section V Process Integration
• 15 Device Isolation, Contacts, and Metalization
• 15.1 Junction and Oxide Isolation
• 15.2 LOCOS Methods
• 15.3 Trench Isolation
• 15.4 Silicon on Insulator Isolation Techniques
• 15.5 Semi-insulation Substrates
• 15.6 Schottky Contacts
• 15.7 Implanted Ohmic Contacts
• 15.8 Alloyed Contacts
• 15.9 Multilevel Metallization
• 15.10 Planarization
• 15.11 Summary
• 16 CMOS Process Flows
• 16.1 Basic Long Channel Device Behavior
• 16.2 Early MOS Technologies
• 16.3 The Basic Three Micron Technology
• 16.4 Device Scaling
• 16.5 Hot Carrier Effects and Drain Engineering
• 16.6 Latchup
• 16.7 Summary
• 17 GaAs FET Technologies
• 17.1 MESFET Device Operation
• 17.2 Basic MESFET Technology
• 17.3 Digital Technologies
• 17.4 MMIC Technologies
• 17.5 MODFETs
• 17.6 Summary
• 18 Silicon Bipolar Techniques
• 18.1 Review of Bipolar Devices - Ideal and Quasi Ideal Behavior
• 18.2 Second Order Effects
• 18.3 Performance of BJT's
• 18.4 Early Bipolar Processes
• 18.5 Advance Bipolar Processes
• 18.6 Hot Electron Effects in Bipolar Transistors
• 18.7 BiCMOS
• 18.8 Analog Bipolar Techniques
• 18.9 Summary
• 19 Integrated Circuit Manufacturing
• 19.1 Yield and Yield Tracking
• 19.2 Particle Control
• 19.3 Statistical Process Control
• 19.4 Full Factorial Experiments and ANOVA
• 19.5 Design of Experiments
• 19.6 Computer Integrated Manufacturing
• 19.7 Summary
• Appendices
• I List of Symbols and Acronyms
• II Properties of Selected Semiconductor Materials
• III Physical Constants
• IV Conversion Factors
• V The Complimentary Error Function
• VI F Values