Ferroelectric Random Access Memories

Fundamentals and Applications

Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto

290 pages, parution le 03/05/2004

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Résumé

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (i) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

Written for:
Researchers, scientists and engineers in semiconductor electronics and memory technology research and development

Sommaire

Part I Ferroelectric Thin Films
- Overview
- Novel Si-Substituted Ferroelectric Films
- Static and Dynamic Properties of Domains
- Nanoscale Phenomena in Ferroelectric Thin Films
Part II Deposition and Characterization Methods
- The Sputtering Technique
- A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films
- Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD
- Materials Integration Strategies
- Characterization by Scanning Nonlinear DielectricMicroscopy
Part III The Fabrication Process and Circuit Design
- The Current Status of FeRAM
- Operation Principle and Circuit Design Issues
- High-Density Integration
- Testing and Reliability
Part IV Advanced-Type Memories
- Chain FeRAMs
- Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM
- The FET-Type FeRAM
Part V Applications and Future Prospects
- Ferroelectric Technologies for Portable Equipment
- The Application of FeRAM to Future Information Technology World

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Caractéristiques techniques

	PAPIER
Éditeur(s)	Springer
Auteur(s)	Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto
Parution	03/05/2004
Nb. de pages	290
Format	16 x 24
Couverture	Relié
Poids	570g
Intérieur	Noir et Blanc
EAN13	9783540407188