Modern Microwave Transistors

Theory, Design, and Performance

Franck Schwierz, Juin J. Liou

498 pages, parution le 08/01/2003

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Résumé

A timely and thorough overview of the state of the art of microwave transistors Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Most of the attention has been focused on Si VLSI (Very Large Scale Integration) technology, the backbone of the consumer semiconductor electronics industry. Microwave transistors went almost unnoticed until the early 1980s because they were primarily utilized in military and space applications. The recent far-reaching upheavals in civil communications technology-especially wireless communication such as cell phones-have thrust microwave transistor technology into the limelight as never before.

Modern Microwave Transistors: Theory, Design, and Performance prepares the engineer with a wide-ranging introduction and overview of microwave transistors. Written by two acknowledged experts, this guide to one of the fastest growing fields in semiconductor electronics offers insight into:

History and concepts of microwave transistors
Semiconductor and heterostructure physics
Properties of the semiconductor materials used in microwave transistors, such as Si, SiGe, III-V compounds, and III-nitrides
Device structures, analysis, and design of the different types of microwave transistors including MESFETs, HEMTs, MOSFETs, BJTs, and HBTs
State-of-the-art performance of microwave transistors
Current and emerging applications of microwave transistors

A timely and comprehensive contribution to the field, Modern Microwave Transistors is an unmatched resource for RF, device, circuit and wireless communications engineers, and others with an interest in transistor technology. It will also be useful for students in the field of semiconductor and microwave electronics.

Contents

Background on Microwave Transistors.
Basic Semiconductor Physics.
Heterostructure Physics.
MESFETs.
High Electron Mobility Transistors.
MOSFETs.
Silicon Bipolar Junction Transistors.
Heterojunction Bipolar Transistors.

Appendix A.1: Frequently Used Symbols.
Appendix A.2: Physical Constants and Unit Conversions.
Appendix A.3: Microwave Frequency Bands.
Appendix A.4: Two-Port Calculations.
Appendix A.5: Important Material Properties of Selected Materials.

L'auteur - Franck Schwierz

FRANK SCHWIERZ, PhD, is head of the RF & Nanoelectronics Research Group at Technische Universitdt (TU) Ilmenau, Germany.

L'auteur - Juin J. Liou

JUIN J. LIOU, PhD, is a professor in the School of Electrical and Computer Science at the University of Central Florida.

Caractéristiques techniques

	PAPIER
Éditeur(s)	Wiley
Auteur(s)	Franck Schwierz, Juin J. Liou
Parution	08/01/2003
Nb. de pages	498
Format	16 x 24
Couverture	Relié
Poids	824g
Intérieur	Noir et Blanc
EAN13	9780471417781
ISBN13	978-0-471-41778-1