Silicon-Germanium Heterojunction Bipolar Transistors
Résumé
While the idea of combining the semiconductor silicon and the semiconductor germanium for use in transistor engineering is an old one, only in the past decade has this concept been reduced to practical reality. The fruit of that effort is the silicon-germanium heterojunction bipolar transistor (SiGe HBT). The implications of the SiGe success story contained in this book are far-ranging and likely to be quite lasting and influential in determining the future course of the electronics infrastructure fueling the miraculous communications explosion of the twenty-first century.
This book is intended for a number of different audiences and venues. It should prove to be a useful resource as: 1) a hands-on reference for practicing engineers and scientists working on various aspects of SiGe technology, including: characterization, device design, fabrication, modeling, and circuit design; 2) a textbook for graduate or advanced undergraduate students in electrical and computer engineering (ECE), physics, or materials science who are interested in cutting-edge integrated circuit (1C) device and circuit technologies; or 3) a reference for technical managers and even technical support / technical sales personnel in the semiconductor industry. It is assumed that the reader has some modest background in semiconductors and bipolar devices (say, at the advanced undergraduate ECE level), but we have been careful to build "from-the-ground-up" in our treatment.
Contents
- Introduction
- SiGe Strained-Layer Epitaxy
- SiGe HBT BiCMOS Technology
- Static Characteristics
- Dynamic Characteristics
- Second Order Phenomena
- Noise
- Linearity
- Temperature Effects
- Other Device Design Issues
- Radiation Tolerance
- Device
- Future Directions
- A- Properties of Silicon and Germanium
L'auteur - John D. Cressler
John D. Cressler is Professor of electrical and computer engineering at The Georgia Institute of Technology . Professor Cressler received his Ph.D. in applied physics from Columbia University.
L'auteur - Guofu Niu
Guofu Niu is Associate Professor of electrical and
computer engineering at Auburn University. He received his
Ph.D. in electrical engineering from Fudan University, in
Shanghai, China.
Caractéristiques techniques
| PAPIER | |
| Éditeur(s) | Artech House |
| Auteur(s) | John D. Cressler, Guofu Niu |
| Parution | 20/02/2003 |
| Nb. de pages | 590 |
| Format | 15,7 x 23,5 |
| Couverture | Relié |
| Poids | 1039g |
| Intérieur | Noir et Blanc |
| EAN13 | 9781580533614 |
| ISBN13 | 978-1-58053-361-4 |
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